Chemical Vapor Deposition of Boron‐Incorporated Graphitic Carbon Nitride Film for Carbon‐Based Wide Bandgap Semiconductor Materials
Chemical Vapor Deposition of Boron‐Incorporated Graphitic Carbon Nitride Film for Carbon‐Based Wide Bandgap Semiconductor Materials
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DOI：
10.1002/pssb.201900375
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发表时间：
2019-11
期刊：
影响因子：
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通讯作者：
N. Urakami;Maito Kosaka;Y. Hashimoto
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文献类型：
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作者：
N. Urakami;Maito Kosaka;Y. Hashimoto
本文讨论了以三聚氰胺和氨硼烷为前体，采用热化学气相沉积（CVD）法在不同生长温度下在c面蓝宝石衬底上生长石墨碳氮化物（g-C3N4）薄膜的B原子。B的掺入是在618 ° C的生长温度下实现的，该温度略高于g-C3N4薄膜的最佳生长温度。通过X射线光电子能谱观察到归因于B-N键的B 1s芯能级的信号峰，表明B掺入到g-C3N4膜中的实现。随着生长温度升高至650 ° C，观察到B组成单调增加和C组成减少，这意味着B原子通过取代到C位点而并入g-C3N4中。观察到光致发光（PL）峰能量的移动。PL峰从非故意掺杂的薄膜的2.75 eV偏移到具有8.0%组成的掺入B的薄膜的3.60 eV。PL峰能量的B组成依赖性与二次函数很好地一致，表明带隙弯曲是由于B掺入到g-C3N4薄膜中而发生的，如在常规化合物半导体合金中一样。
This article discusses the growth of B atoms incorporated into the graphitic carbon nitride (g‐C3N4) thin films on c‐plane sapphire substrates at various growth temperatures by thermal chemical vapor deposition (CVD) using melamine and ammonia borane as precursors. The B incorporation is achieved at a growth temperature of 618 °C, which is slightly higher than the optimal growth temperature of g‐C3N4 thin films. The signal peak for the B 1s core level attributed to B—N bonds is observed by X‐ray photoelectron spectroscopy, indicating the realization of B incorporation into g‐C3N4 films. With an increase in the growth temperature up to 650 °C, a monotonically increasing B composition and a decreasing C composition are observed, implying that B atoms are incorporated into g‐C3N4 by the substitution into C sites. A shift of photoluminescene (PL) peak energy is observed. The PL peak shifts from 2.75 eV for unintentionally doped thin film to 3.60 eV for B‐incorporated thin films with a composition of 8.0%. The B composition dependence of PL peak energies is in good agreement with the quadratic function, suggesting that the bandgap bowing occurs due to B incorporation into the g‐C3N4 thin films as in conventional compound semiconductor alloys.