Formation mechanism of Si-Y-C ceramic matrix by reactive melt infiltration using Si-Y alloy and properties of C/Si-Y-C composites
Formation mechanism of Si-Y-C ceramic matrix by reactive melt infiltration using Si-Y alloy and properties of C/Si-Y-C composites
复制标题
Si-Y合金反应熔渗Si-Y-C陶瓷基体形成机理及C/Si-Y-C复合材料性能
DOI：
10.1016/j.ceramint.2020.04.225
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发表时间：
2020-08
影响因子：
5.2
通讯作者：
Hu Rui
中科院分区：
文献类型：
--
作者：
Gao Yuqing;Liu Yongsheng;Wang Jing;Zhang Chengyu;Pedzich Zbigniew;Li Jinguang;Hu Rui
本文采用反应熔渗法（RMI）将Si-Y共晶合金引入多孔C/C预制体中制备C/Si-Y-C复合材料。研究了复合材料的相组成及其分布。结果表明，在Si-Y-C基体的典型区中，存在四个主要区域，非晶碳、掺杂有YSi 2的多晶SiC、非晶SiC和单晶YSi 2。基于Si-Y合金与C/C预制体之间的反应和显微组织观察，提出了一个反映反应过程的显微组织形成机理模型。与C/C-SiC相比，C/Si-Y-C复合材料的抗弯强度、断裂韧性、热扩散率和导热率均有所提高。
Herein, Si-Y eutectic alloy were introduced into porous C/C preform by reactive melt infiltration (RMI) to prepare C/Si-Y-C composite. Phase compositions and their distributions in the as-prepared composites were investigated. Result indicated that four main regions were found in the typical zone in Si-Y-C matrix, i.e., amorphous carbon, polycrystalline SiC doped with YSi2, amorphous SiC and single crystal YSi2. Based on the reaction between Si-Y alloy and C/C preform and microstructural observations, a model regarding to microstructure formation mechanism was proposed to reveal reaction process. Moreover, improved flexural strength, fracture toughness, thermal diffusivity and thermal conductivity of C/Si-Y-C composite were achieved compared to C/C-SiC.
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影响因子：
3.7
作者：
Grace Jm;Anderson Ac
通讯作者：
Grace Jm;Anderson Ac
DOI：
10.1016/j.msea.2018.08.036
发表时间：
2018-09
期刊：
Materials Science and Engineering: A
影响因子：
--
作者：
Y. Tong;Wentao Zhu;S. Bai;Yongle Hu;Xin Xie;Yang Li
通讯作者：
Y. Tong;Wentao Zhu;S. Bai;Yongle Hu;Xin Xie;Yang Li
影响因子：
5.2
作者：
Jinguang Li;R. Hu;Jieren Yang;Yongsheng Liu
通讯作者：
Jinguang Li;R. Hu;Jieren Yang;Yongsheng Liu
影响因子：
5.2
作者：
Yiguang Wang;Xiaojuan Zhu;Litong Zhang;Lai-fei Cheng
通讯作者：
Yiguang Wang;Xiaojuan Zhu;Litong Zhang;Lai-fei Cheng
DOI：
10.1016/j.compositesa.2015.05.018
发表时间：
2015-09
影响因子：
8.7
作者：
T. Aoki;T. Ogasawara
通讯作者：
T. Aoki;T. Ogasawara