Design Considerations for Controlling Silicon Nanoparticle Nucleation and Growth in a Nonthermal Plasma
Design Considerations for Controlling Silicon Nanoparticle Nucleation and Growth in a Nonthermal Plasma
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DOI:
10.1007/s11090-022-10299-3
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发表时间:
2022-11
影响因子:
3.6
通讯作者:
E. Husmann;J. Polito;S. Lanham;M. Kushner;E. Thimsen
中科院分区:
文献类型:
--
作者:
E. Husmann;J. Polito;S. Lanham;M. Kushner;E. Thimsen
Controlling the nucleation and growth of nanoparticles in low temperature plasma systems is imperative for controlling nanoparticle size distributions; and for some applications such as deposition and etching in microelectronic processing, preventing particle contamination. In this work, silicon nanoparticle (NP) production from silane is used as a model system to investigate the nucleation process. Although the mechanisms responsible for silicon NP nucleation and growth have been studied, it is unclear how controllable system parameters (e.g., pressure, system geometry, and gas composition) can be used to inhibit or promote NP formation. For example, the transport of reactive silane species is expected to significantly affect the feed fraction of silane required to nucleate silicon NP (the nucleation onset fraction) due to losses at the reactor walls. In this work, NP mass density was determined as a function of system pressure, gas composition, and reactor diameter for a tubular flow-through radiofrequency plasma using Ar/H2/He/SiH4gas mixtures. A quartz crystal microbalance impactor was developed to measure the total aerosol mass density downstream of the plasma and thereby identify the nucleation onset and its dependence on process parameters. A reaction mechanism was developed and incorporated into a global plasma chemistry model to better understand the nucleation onset and NP growth.