Electrically injected nonpolar GaN-based VCSELs with lattice-matched nanoporous distributed Bragg reflector mirrors

Electrically injected nonpolar GaN-based VCSELs with lattice-matched nanoporous distributed Bragg reflector mirrors
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DOI:
10.1117/12.2545030
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发表时间:
2019-02
影响因子:
2.3
通讯作者:
Saadat Mishkat-Ul-Masabih;A. Aragon;M. Monavarian;T. Luk;D. Feezell
Saadat Mishkat-Ul-Masabih;A. Aragon;M. Monavarian;T. Luk;D. Feezell
中科院分区:
物理与天体物理3区
文献类型:
--
作者:
Saadat Mishkat-Ul-Masabih;A. Aragon;M. Monavarian;T. Luk;D. Feezell

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我们首次实现了具有晶格匹配纳米孔底DBR的非极性m平面GaN基垂直腔面发射激光器(VCSEL)。在室温下获得了近409 nm的脉冲激光输出,线宽为∼0.6 nm,最大输出功率为∼1.5 mW。垂直腔面发射激光器在a方向上被线偏振和偏振锁定,偏振比为0.94。高的偏振比和偏振钉扎表明,纳米多孔DBRS的光散射可以忽略不计。高达357K的特征温度是由于峰值增益与腔模波长之间略有负的偏移所致。
We demonstrate the first electrically injected nonpolar m-plane GaN-based vertical-cavity surface-emitting lasers (VCSELs) with lattice-matched nanoporous bottom DBRs. Lasing under pulsed operation at room temperature was observed near 409 nm with a linewidth of ∼0.6 nm and a maximum output power of ∼1.5 mW. The VCSELs were linearly polarized and polarization-locked in the a-direction, with a polarization ratio of 0.94. The high polarization ratio and polarization pinning reveal that the optical scattering from the nanoporous DBRs is negligible. A high characteristic temperature of 357 K resulted from the slightly negative offset between the peak gain and cavity mode wavelengths.