Richardson-Schottky transport mechanism in ZnS nanoparticles
Richardson-Schottky transport mechanism in ZnS nanoparticles
复制标题
ZnS纳米颗粒中的理查森-肖特基输运机制
DOI：
10.1063/1.4948982
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发表时间：
2016-05-01
期刊：
影响因子：
1.6
通讯作者：
Xu, Xiulai
中科院分区：
文献类型：
--
作者：
Ali, Hassan;Khan, Usman;Xu, Xiulai
本文报道了ZnS半导体纳米粒子的合成及其电输运机理。对ZnS压块进行了随温度变化的直流电输运测量，研究了温度范围从300 K到400 K的输运机制。高频介电常数已被用来获得Richardson-Schottky和Poole-Frenkel势垒降低系数的理论值。势垒降低系数的实验值已计算出的电导-电压特性。势垒降低系数βexp的实验值与Richardson-Schottky势垒降低系数βth，RS的理论值接近，表明在所研究的温度范围内，ZnS纳米颗粒的导电主要是Richardson-Schottky发射。
We report the synthesis and electrical transport mechanism in ZnS semiconductor nanoparticles. Temperature dependent direct current transport measurements on the compacts of ZnS have been performed to investigate the transport mechanism for temperature ranging from 300 K to 400 K. High frequency dielectric constant has been used to obtain the theoretical values of Richardson-Schottky and Poole-Frenkel barrier lowering coefficients. Experimental value of the barrier lowering coefficient has been calculated from conductance-voltage characteristics. The experimental value of barrier lowering coefficient βexp lies close to the theoretical value of Richardson-Schottky barrier lowering coefficient βth,RS showing Richardson-Schottky emission has been responsible for conduction in ZnS nanoparticles for the temperature range studied.