ELECTRON TRANSPORT CHARACTERISTICS OF 6H-SIC AND 4H- SIC FOR HIGH TEMPERATURE DEVICE MODELING
ELECTRON TRANSPORT CHARACTERISTICS OF 6H-SIC AND 4H- SIC FOR HIGH TEMPERATURE DEVICE MODELING
复制标题
高温器件建模中 6H-SIC 和 4H-SIC 的电子输运特性
DOI：
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发表时间：
2010
期刊：
影响因子：
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通讯作者：
M. R. Roknabadi
中科院分区：
文献类型：
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作者：
H. Arabshahi;M. R. Roknabadi
用Monte Carlo方法模拟了电子在6 H-SiC和4 H-SiC纤锌矿体相中的输运过程。球形的，非抛物形的导带谷的布里渊区的K，U和K对称点拟合的第一原理带结构。在300-600 K和1016 ~ 1020 cm-3范围内，计算了电子漂移速度随温度和施主离子浓度的变化关系.与4 H-SiC相比，由于深施主能级的冻结，6 H-SiC中电离杂质散射的作用被抑制，声子散射的作用被增强。对于两种材料，它被发现，电子速度过冲只发生在电场增加到一定的字段以上的值，每种材料独特的。该临界场强烈依赖于材料参数。
The Monte Carlo method is used to simulate electron transport in bulk wurtzite phases of 6H-SiC and 4H-SiC using a three valley analytical band structure. Spherical, non-parabolic conduction band valleys at the , K and U symmetry points of the Brillouin zone are fitted to the first-principles band structure. The electron drift velocity is calculated as a function of temperature and ionized donor concentration in the ranges of 300-600 K and 10 16 -10 20 cm -3 , respectively. Due to the freezout of deep donor levels the role of ionized impurity scattering in 6H-SiC is suppressed and the role of phonon scattering is enhanced, compared to 4H-SiC. For two materials, it is found that electron velocity overshoot only occurs when the electric field is increased to a value above a certain field unique to each material. This critical field is strongly dependent on the material parameters.