CdF2/CaF2 Resonant Tunneling Diode Fabricated on Si(111)
CdF2/CaF2 Resonant Tunneling Diode Fabricated on Si(111)
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Si(111) 上制造的 CdF2/CaF2 谐振隧道二极管
DOI：
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发表时间：
1996
期刊：
影响因子：
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通讯作者：
N. Sokolov
中科院分区：
文献类型：
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作者：
A. Izumi;N. Matsubara;Yusuke Kushida;K. Tsutsui;N. Sokolov
我们提出使用一种新的材料，CdF 2，和异质结构组成的CdF 2和CaF 2的Si基量子效应器件的应用。确定了Si（111）衬底上分子束外延CaF 2/CdF 2/CaF 2异质结各层的最佳生长温度。用这种异质结在Si衬底上制作了共振隧穿二极管，在室温下测得了P/V电流比最大为24的负微分电阻。
We propose use of a new material, CdF2, and a heterostructure composed of CdF2 and CaF2 for applications of Si-based quantum effect devices. The optimum growth temperature for each layer of a CaF2/CdF2/CaF2 heterostructure grown by molecular beam epitaxy on a Si(111) substrate was determined. Resonant tunneling diodes consisting of this heterostructure on Si were fabricated and negative differential resistance whose P/V current ratio was 24 at maximum was detected at room temperature.