Antiferroelectric Tunnel Junctions
Antiferroelectric Tunnel Junctions
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DOI：
10.1002/aelm.201700126
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发表时间：
2017-07-01
影响因子：
6.2
通讯作者：
Alexe, Marin
中科院分区：
文献类型：
--
作者：
Apachitei, Geanina;Peters, Jonathan J. P.;Alexe, Marin
本文首次报道了脉冲激光沉积和溅射法制备La0.7Sr0.3MnO3/PbZrO3/Co的反铁电隧道结。当PbZrO3势垒厚度降至约4nm时，电流-电压曲线突出了与反铁电行为相对应的单稳定型（阈值）电阻开关。在室温下观察到隧道电阻值高达10(9)%，远高于铁电隧道结的通常值。电阻开关是由外场诱导的非极性转换到极性转换的结合，导致势垒高度发生显著变化，以及从直接隧穿到Fowler-Nordheim隧穿的交叉。在低温下，器件表现出反隧穿磁阻，其中平行磁化状态下的电阻更高，这很可能是由于界面Zr和Co离子杂化对自旋极化的影响。
Antiferroelectric tunnel junctions of La0.7Sr0.3MnO3/PbZrO3/Co fabricated by pulsed laser deposition and sputtering are reported for the first time. The current-voltage curves highlight the monostability type (threshold) resistive switching corresponding to the antiferroelectric behavior for the PbZrO3 barrier down to approximate to 4 nm thickness. Tunneling electroresistance values up to 10(9)%, which is much higher than the usual values in ferroelectric tunnel junctions, are observed at room temperature. The resistive switching is attributed to a combination of the nonpolar to polar switching induced by an external field, leading to significant changes in the barrier heights, and the crossover from direct tunneling to Fowler-Nordheim tunneling. At low temperatures, the devices exhibit an inverse tunneling magnetoresistance, in which the resistance is higher in the parallel magnetization state, most probably caused by interfacial Zr and Co ions' hybridization influence on the spin polarization.