Fabrication of YBa/sub 2/Cu/sub 3/O/sub 7-x/ films on buffered metal tapes fired at low temperature by MOD method using trifluoroacetate salts
Fabrication of YBa/sub 2/Cu/sub 3/O/sub 7-x/ films on buffered metal tapes fired at low temperature by MOD method using trifluoroacetate salts
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DOI：
10.1109/77.919661
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发表时间：
2001-03
影响因子：
1.8
通讯作者：
T. Araki;Y. Takahashi;K. Yamigiwa;T. Yuasa;Y. Iijima;K. Takeda;S. Kim;Y. Yamada;I. Hirabayashi
中科院分区：
文献类型：
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作者：
T. Araki;Y. Takahashi;K. Yamigiwa;T. Yuasa;Y. Iijima;K. Takeda;S. Kim;Y. Yamada;I. Hirabayashi
使用三氟乙酸盐的金属有机沉积（MOD）被认为是涂层导体最有前途的方法之一，因为它使我们能够以低成本的设施获得非常高的 J/sub c/ 薄膜。我们优化了该方法中的各种工艺条件，并在CeO/sub 2/缓冲YSZ单晶上成功获得了4.1 MA/cm/sup 2/（77 K，0 T）的临界电流密度（J/sub c/）（77 K，0 T），在CeO/sub 2/缓冲YSZ单晶上烧成厚度为1800 /spl Aring/的YBa/sub 2/Cu/sub 3/O/sub 7-x/（YBCO）薄膜。度/℃。对于缓冲金属基底上的 YBCO 薄膜，很难在相同的沉积条件下制造。然后需要进行低温热处理以在金属基底上沉积。另一方面，这种热处理也使得烧成的薄膜中存在未反应的BaF/sub 2/，导致薄膜的J/sub c/较低，因此通过低温热处理制备BaF/sub 2/完全反应的YBCO薄膜是关键。我们研究了烧制中的化学反应，并建立了即使在 725/spl deg/C 下也能制造 YBCO 薄膜的烧制曲线。利用此配置文件，我们可以在 725/spl deg/C 下在 CeO/sub 2/ 缓冲 YSZ 单晶上成功制备 YBCO 薄膜，其 J/sub c/ 为 3.0 MA/cm/sub 2/ 以及在 CeO/sub 2/（溅射）/YSZ（离子束辅助沉积：IBAD）缓冲镍基合金（哈氏合金）带上成功制备 YBCO 薄膜，其 J/sub c/ 为 3.0 MA/cm/sub 2/ 0.81 MA/cm/sup 2/。
Metalorganic deposition (MOD) using trifluoroacetates is considered to be one of the most promising methods for coated conductors, because it enables us to obtain very high J/sub c/ films with low-cost facilities. We have optimized various processing conditions in this method and successfully obtained critical current density (J/sub c/) of 4.1 MA/cm/sup 2/ (77 K, 0 T) for the YBa/sub 2/Cu/sub 3/O/sub 7-x/ (YBCO) film of 1800 /spl Aring/ in thickness on CeO/sub 2/ buffered YSZ single crystal, which was fired at 800/spl deg/C. In the case of YBCO films on buffered metallic substrates, it is difficult to fabricate under the same deposition condition. Then low temperature heat treatment is required for deposition on metal substrate. On the other hand, such heat treatment also permits non-reacted BaF/sub 2/ in fired film, that leads to low J/sub c/ of the film, Therefore it is the key to fabricate YBCO film with entire reaction of BaF/sub 2/ by the low temperature heat treatment. We have investigated chemical reactions in firing and established a firing profile to fabricate YBCO film even at 725/spl deg/C. With this profile, we can successfully fabricate the YBCO film at 725/spl deg/C on CeO/sub 2/ buffered YSZ single crystal which has J/sub c/ of 3.0 MA/cm/sub 2/ and the YBCO film on CeO/sub 2/ (sputtered)/YSZ (ion-beam-assisted deposition: IBAD) buffered Ni based alloy (hastelloy) tape which has J/sub c/ of 0.81 MA/cm/sup 2/.