Single-Target Sputtring Process for Lead Zirconate Titanate Thin Films with Precise Composition Control

Single-Target Sputtring Process for Lead Zirconate Titanate Thin Films with Precise Composition Control
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精确成分控制的锆钛酸铅薄膜单靶溅射工艺

DOI：
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发表时间：
1991
期刊：
影响因子：
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通讯作者：
Eiji Takeda Eiji Takeda
Eiji Takeda Eiji Takeda
中科院分区：
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文献类型：
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作者：
K. Torii;T. Kaga;K. Kushida;Hiroshi Takeuchi Hiroshi Takeuchi;Eiji Takeda Eiji Takeda

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研究了射频磁控溅射法制备锆钛酸铅（PZT）薄膜的工艺条件对薄膜结构和电学性能的影响。据发现，在溅射膜中的Pb含量是成比例的RF功率，从而使得它可以精确地控制膜的组成。通过在590°C下的沉积后退火获得结晶良好的钙钛矿结构。化学计量膜（即，Pb/Zr+Ti=1）的介电常数值为1180。
The influence of growth conditions on rf-magnetron sputtered lead zirconate titanate (or PZT) thin films has been investigated, and the structural and electrical properties of PZT thin films have been examined. It was found that the Pb content in a sputtered film is proportional to rf power, thereby making it possible to control the film composition precisely. A well-crystallized perovskite structure was obtained by postdeposition annealing at 590°C. A stoichiometric film (i.e., Pb/Zr+Ti=1) had a dielectric constant value of 1180.