Effect of multisite alloying and chloride doping for realizing a high thermoelectric performance in misfit-layered chalcogenide
Effect of multisite alloying and chloride doping for realizing a high thermoelectric performance in misfit-layered chalcogenide
复制标题
多位合金化和氯化物掺杂对错配层状硫族化物实现高热电性能的影响
DOI：
10.1016/j.jallcom.2020.155756
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发表时间：
2020
影响因子：
6.2
通讯作者：
Ang Ran
中科院分区：
文献类型：
--
作者：
Yin Cong;Tang Jing;Chen Zhiyu;Liu Hangtian;Tang Mingjing;Hu Qing;Ang Ran
Misfit-layered chalcogenide has captured large attention due to its unique opportunity for optimizing figure of meritzToriginating from the natural superlattice structure. Existing strategies mainly focus on single element doping at cation site, while multisite alloying, especially for the doping at anion site, has not yet properly understood. In this work, chloride doping at anion site as a novel method is utilized to create excess electrons for manipulating the carrier concentration, thus achieving an advancement on electronic performance (up to 1.0 mW K−2m−1) by ∼35% in oriented textured (SnS)1.2(TiS2)2alloys. Such a chloride anion doping also enables a reduction on the lattice thermal conductivity to 0.82 and 0.35 W K−1m−1in the in-plane and out-of-plane directions, respectively. In addition, the multisite alloying strengthen the phonon scattering for a further reduction on lattice thermal conductivity, thus leading to an enhancement of thermoelectric performance. Consequently, a recordzT∼0.45 is realized in the in-plane direction, which demonstrates (SnS)1.2(TiS2)2based material as a promising thermoelectric candidate and the multisite alloying as an effective strategy forzTenhancement.
