Characterization of electron emission from N-doped diamond using simultaneous field emission and photoemission technique
Characterization of electron emission from N-doped diamond using simultaneous field emission and photoemission technique
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使用同步场发射和光电发射技术表征 N 掺杂金刚石的电子发射
DOI：
10.1016/s0169-4332(99)00026-4
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发表时间：
1999
期刊：
影响因子：
--
通讯作者：
B. Pate
中科院分区：
文献类型：
--
作者：
K. Okano;T. Yamada;A. Sawabe;S. Koizumi;R. Matsuda;C. Bandis;W. Chang;B. Pate
使用尿素（NH2）2CO）作为掺杂剂，通过热丝化学气相沉积（CVD）技术生长了氮（N）掺杂金刚石薄膜。根据反射高能电子衍射（RHEED）、俄歇电子能谱（AES）、反射电子能量损失能谱（REELS）和拉曼光谱的结果，薄膜的本体和表面被鉴定为金刚石，而卢瑟福背散射（RBS）和X射线光电子能谱（XPS）测量证实N浓度为1020cm−3量级。据报道，薄膜场致发射的阈值场约为 0.5 V/μm。讨论了电子态的起源以及使用同步场发射和光电发射（FEPES）技术从重氮掺杂金刚石场发射的相关特性。 N 掺杂金刚石的 FEPES 结果表明，在激活过程后，所需的施加场有所减小，同时场发射从价带边缘到费米能级发生变化，表明表面的金属态主导场发射。
Nitrogen (N)-doped diamond films have been grown by hot filament chemical vapor deposition (CVD) technique using urea (NH2)2CO) as a dopant. The bulk and surface of the film are identified as diamond from the results of reflection high energy electron diffraction (RHEED), Auger electron spectroscopy (AES), reflective electron energy loss spectroscopy (REELS) and Raman spectroscopy, while the N concentration is confirmed to be of the order of 1020cm−3from Rutherford backscattering (RBS) and X-ray photoelectron spectroscopy (XPS) measurements. The threshold field for field emission from the films has been reported to be about 0.5 V/μm. The origin of the electronic states and the related characteristics of field emission from heavily N-doped diamond using the technique of simultaneous field emission and photoemission (FEPES) has been discussed. The FEPES result for the N-doped diamond suggests that after an activation procedure, there is a decrease in the required applied field together with a change in the field emission from the valence band edge to the Fermi level, indicating that metallic states at the surface dominate field emission.