Performance analysis of dual gate organic thin film transistor through analytical modeling
Performance analysis of dual gate organic thin film transistor through analytical modeling
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通过分析建模对双栅有机薄膜晶体管进行性能分析
DOI：
10.1109/ccaa.2016.7813966
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
B. Kumar
中科院分区：
文献类型：
--
作者：
S. Negi;A. K. Baliga;Yamini Pandey;P. Mittal;B. Kumar
近年来，有机电子学领域的研究工作取得了巨大的进展。许多创新的做法，预计提高器件和电路的性能。DG-OTFT即双栅有机薄膜晶体管是用于增强基于有机材料的器件和电路性能的这些方法之一。DG-OTFT增强了器件和电路的操作，也使器件坚固。在本研究论文中，深入分析了DG-OTFT的不同操作模式（底栅，顶栅，双栅模式）的阈值电压，驱动电流，迁移率，亚阈值斜率和电流开关比。观察到，由于在DG-OTFT中形成两个沟道，因此在双栅极模式下，其导致上级载流子注入，其显示驱动电流的显著增强。使用Silvaco Inc.的State of the are Atlas 2-D对使用PDPP-TNT作为有机半导体的DG-OTFT的电特性和性能参数进行评估和验证，并报告实验结果。这是一个数值器件2-D TCAD模拟器，它被观察到，模拟结果与实验数据是非常吻合的。
Enormous research has been done in the field of organic electronics recently. A lot of innovative practices are anticipated for boosting the device and circuit performance. DG-OTFT i.e. dual gate organic thin film transistors are one of these methods that are used for the enhancement of the organic materials based devices and circuits performance. The DG-OTFT augments the operation of the devices and circuits and also makes the devices sturdy. In this research paper depth analyses of the DG-OTFT for different modes of operation (bottom gate, top gate, and dual gate modes) in terms of threshold voltage, drive current, mobility, sub-threshold slope and current on-off ratio is performed. It is observed that as the two channels are formed in DG-OTFT, it results in superior carrier injection that shows significant enhancement in drive current, in the dual gate mode. Evaluation and validation of electrical characteristics and performance parameters of DG-OTFT using PDPP-TNT as organic semiconductor with the reported experimental results is done using state of the are Atlas 2-D by Silvaco Inc. It is a numerical device 2-D TCAD simulator, and it is observed that the simulation results are in close agreement with experimental data.