Self-organized〈1 0 0〉direction growth of germanium film on insulator obtained by high speed continuous wave laser annealing
Self-organized〈1 0 0〉direction growth of germanium film on insulator obtained by high speed continuous wave laser annealing
复制标题
高速连续波激光退火绝缘体上锗薄膜自组织<1 0 0>方向生长
DOI：
10.1016/j.matlet.2021.129328
复制
发表时间：
2021
影响因子：
3
通讯作者：
Fukata Naoki
中科院分区：
文献类型：
--
作者：
Matsumura Ryo;Fukata Naoki
为了实现下一代电子学，在绝缘衬底上生长锗晶体由于其高载流子迁移率而引起关注，并且通过对锗施加拉伸应变来预期载流子迁移率的进一步改善。我们以前已经实现了高拉伸应变锗膜上的绝缘衬底，使用高速连续波激光退火工艺。这封信报告了我们如何使用电子衍射背散射测量生长的薄膜的特点，并发现了一个有趣的自组织<1 0 0>方向类型的增长，结果从扫描退火激光在高速。以这种方式获得主导{1 1 0}取向的膜。下面从表面能的观点讨论这种现象。
To realize next-generation electronics, germanium crystal growth on insulating substrates is attracting attention due to its high carrier mobility, and further improvement of carrier mobility is anticipated by applying tensile strain to germanium. We have previously realized highly tensile-strained germanium films on insulating substrates using a high speed continuous wave laser annealing process. This letter reports how we characterized the grown films using electron diffraction backscatter measurements and discovered an interesting self-organized <1 0 0> direction type of growth that results from scanning the annealing laser at high speed. Dominant {1 1 0} oriented films were obtained in this way. This phenomenon is discussed below from the viewpoint of surface energy.