Identification of various luminescence centers in CuI films by cathodoluminescence technique
Identification of various luminescence centers in CuI films by cathodoluminescence technique
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DOI：
10.1016/s0022-2313(03)00114-5
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发表时间：
2003-12
影响因子：
3.6
通讯作者：
P. Sirimanne;T. Soga;T. Jimbo
中科院分区：
文献类型：
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作者：
P. Sirimanne;T. Soga;T. Jimbo
采用不同的工艺在室温下制备CuI薄膜。采用脉冲激光沉积技术制备的薄膜带隙能量有明显的扩展。在CuI薄膜中发现了不同的发光中心，并提出了不同中心阴极发光的不同机理。
CuI films are prepared by different techniques at room temperature. An expansion of band gap energy was observed for the thin films prepared by pulse laser deposition technique. Various luminescence centers are identified in CuI films and different mechanisms are proposed for cathodoluminescence at different centers.