Skutterudite structure and thermoelectric property in CefFe8−xCoxSb24 (f = 0–2, x = 0–8)
Skutterudite structure and thermoelectric property in CefFe8−xCoxSb24 (f = 0–2, x = 0–8)
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DOI：
10.1016/s0025-5408(00)00203-8
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发表时间：
2000
影响因子：
5.4
通讯作者：
H. Kitagawa;M. Hasaka;T. Morimura;H. Nakashima;S. Kondo
中科院分区：
文献类型：
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作者：
H. Kitagawa;M. Hasaka;T. Morimura;H. Nakashima;S. Kondo
通过X射线衍射（XRD）、透射电子显微镜下的能量色散X射线（EDX）和热电电动势的测量研究了CefFe 8 − xCoxSb 24的方钴矿结构和热电性能。Ce在方钴矿中的填充数（f）随Co对Fe的取代数（x）的变化而变化，并随x的增加而减少。Sb的四角环随着f的增加比随着x的增加更快地变成正方形。晶格参数随f的增大而增大，而随x的增大而减小。当f < 1时，热电动势的符号取决于x，但当f > 1时，它总是正的。半导体的类型在194/nm 3的临界价电子密度处改变。
The skutterudite structure and thermoelectric properties of CefFe8−xCoxSb24were investigated by means of X-ray diffraction (XRD) experiments, energy-dispersive X-ray (EDX) measurements under a transmission electron microscope, and measurements of the thermoelectromotive force. The filling number of Ce into voids in the skutterudite (f) is variable at each substitution number of Fe by Co (x) and decreases with increasing x. The four-cornered ring of Sb tends to become square more rapidly with increasing f than with increasing x. The lattice parameter increases with increasing f, whereas it decreases with increasing x. The sign of the thermoelectromotive force depends on x for f < 1, although it is always positive for f > 1. The type of semiconductor changes at a critical valence electron density of 194/nm3.