Submicron conducting channels defined by shallow mesa etch in GaAs‐AlGaAs heterojunctions
Submicron conducting channels defined by shallow mesa etch in GaAs‐AlGaAs heterojunctions
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GaAs-AlGaAs异质结中浅台面蚀刻定义的亚微米导电通道
DOI：
10.1063/1.97243
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发表时间：
1986
影响因子：
4
通讯作者：
J. André
中科院分区：
文献类型：
--
作者：
H. Houten;V. Wees;M. Heijman;J. André
本文提出了一种研究GaAs - AlGaAs异质结二维电子气中电子侧向约束的新方法。电子在静电作用下被蚀刻在氮掺杂AlGaAs上层的浅台状结构所限制。这种结构是用电子束光刻和反应离子蚀刻制造的。未掺杂的AlGaAs间隔层不去除，以避免迁移率下降和通道耗尽。为了研究电输运性质，已经制作了长而窄的通道。在亚微米范围内的有效通道宽度小于台面结构的宽度。给出了初步的低温磁阻数据。
A new approach to the lateral confinement of electrons in the two‐dimensional electron gas of GaAs‐AlGaAs heterojunctions has been developed. The electrons are electrostatically confined by a shallow mesa structure etched in the upper n‐doped AlGaAs layer. This structure is fabricated using electron beam lithography and reactive ion etching. The undoped AlGaAs spacer layer is not removed in order to avoid mobility degradation and channel depletion. Long narrow channels have been made for the study of electrical transport properties. The effective channel width in the submicron range is smaller than the width of the mesa structure. Preliminary low‐temperature magnetoresistance data are presented.