Vertical InGaAs Nanowire Array Photodiodes on Si
Vertical InGaAs Nanowire Array Photodiodes on Si
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DOI：
10.1021/acsphotonics.8b01089
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发表时间：
2019-02-01
期刊：
影响因子：
7
通讯作者：
Motohisa, Junichi
中科院分区：
文献类型：
--
作者：
Chiba, Kohei;Yoshida, Akinobu;Motohisa, Junichi
我们展示了 Si 上的垂直 InGaAs 纳米线 (NW) 阵列光电二极管，其对可见光 (635 nm) 和近红外光（类似于 1.55 μm）具有光学响应。通过选择性区域生长，垂直纳米线直接生长在硅上。在InGaAs NWs中采用重Sn掺杂接触层，由于串联电阻较低，改善了二极管特性，因此在635 nm处获得了0.25 A/W的光响应率，是改进前的两倍。此外，由于抑制了表面复合，InGaAs-InP核壳纳米线的光电流密度在1.55μm波段的光照射下高出约20倍。这些发现预计将对光学互连和硅平台的基于纳米线的光伏应用有用。
We demonstrated vertical InGaAs nanowire (NW) array photodiodes on Si that were optically responsive to visible light (635 nm) and near-infrared light (similar to 1.55 mu m). The vertical NWs were directly grown on Si by selective-area growth. Implementation of a heavily Sn-doped contact layer in the InGaAs NWs improved the diode characteristic because of a lower series resistance, and as a result, a photoresponsivity of 0.25 A/W was obtained at 635 nm, which was twice that before the improvement. Moreover, the photocurrent density of InGaAs-InP core-shell NWs was about 20-fold higher under illumination with light in the 1.55 mu m wavelength band as a result of suppression of surface recombination. These findings are expected to be useful for NW-based photovoltaic applications for optical interconnection and Si platforms.