Field-free approaches for deterministic spin–orbit torque switching of the perpendicular magnet
Field-free approaches for deterministic spin–orbit torque switching of the perpendicular magnet
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DOI：
10.1088/2752-5724/ac6577
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发表时间：
2022-04
期刊：
影响因子：
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通讯作者：
Hao Wu;Jing Zhang;B. Cui;S. A. Razavi;X. Che;Quanjun Pan;Di Wu;Guoqiang Yu;Xiufeng Han;Kang L. Wang
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文献类型：
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作者：
Hao Wu;Jing Zhang;B. Cui;S. A. Razavi;X. Che;Quanjun Pan;Di Wu;Guoqiang Yu;Xiufeng Han;Kang L. Wang
全电驱动磁化切换是新一代自旋电子学存储器和逻辑器件的研究热点，尤其是基于自旋轨道扭矩的磁随机存取存储器(SOT-MRAM)，由于其具有低功耗、读写速度快、耐久性高等优点。对于传统的SOT驱动的垂直磁各向异性磁体的切换，需要一个外加辅助磁场来打破磁体的反转对称性，这不仅会导致额外的功耗，而且会使电路变得更加复杂。在过去的十年里，人们致力于利用SOT进行无场磁化操纵。在本综述中，我们介绍了SOT的基本概念。在此基础上，重点研究了几种实现垂直磁体无磁场确定性SOT开关的方法。其机理主要包括镜像对称性破缺、手性对称性破缺、交换偏置和层间交换耦合。此外，我们还介绍了具有非传统起源和对称性的SOT研究的最新进展。最后一节介绍了无磁场SOT开关在SOT-MRAM技术中潜在应用的工业级方法。
All-electrical driven magnetization switching attracts much attention in next-generation spintronic memory and logic devices, particularly in magnetic random-access memory (MRAM) based on the spin–orbit torque (SOT), i.e. SOT-MRAM, due to its advantages of low power consumption, fast write/read speed, and improved endurance, etc. For conventional SOT-driven switching of the magnet with perpendicular magnetic anisotropy, an external assisted magnetic field is necessary to break the inversion symmetry of the magnet, which not only induces the additional power consumption but also makes the circuit more complicated. Over the last decade, significant effort has been devoted to field-free magnetization manipulation by using SOT. In this review, we introduce the basic concepts of SOT. After that, we mainly focus on several approaches to realize the field-free deterministic SOT switching of the perpendicular magnet. The mechanisms mainly include mirror symmetry breaking, chiral symmetry breaking, exchange bias, and interlayer exchange coupling. Furthermore, we show the recent progress in the study of SOT with unconventional origin and symmetry. The final section is devoted to the industrial-level approach for potential applications of field-free SOT switching in SOT-MRAM technology.