Superconductivity in a two monolayer thick indium film on Si(111)√3×√3-B

Superconductivity in a two monolayer thick indium film on Si(111)√3×√3-B
复制标题

Si(111)√3×√3-B 上两层单层厚铟膜的超导性

DOI:
10.1103/physrevb.106.045423
复制
发表时间:
2022
期刊:
影响因子:
3.7
通讯作者:
Hirayama Hiroyuki
Hirayama Hiroyuki
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
Ogino Takahiro;Seo Insung;Tajiri Hiroo;Nakatake Masashi;Takakura Sho-ichi;Sato Yudai;Hasegawa Yukio;Gohda Yoshihiro;Nakatsuji Kan;Hirayama Hiroyuki

文献摘要

相似文献

已知具有矩形结构的两单层厚In薄膜在3.18 K时在衬底上显示超导性。我们在基板上合成了直晶薄膜,发现它在= 2.38 K时也成为超导体。衬底上的In薄膜显示了衬底上的二维自由电子类圆形费米面。然而,在费米表面的蝴蝶翅膀形状轮廓被发现在基片上被移动和扩大。密度泛函计算表明,这是由衬底的差异引起的。考虑到最近报道的表面缺陷密度依赖,在基板上被认为与基板上相同。这些结果表明,与衬底的相互作用在两单层厚的in薄膜的超导性中并不起关键作用。
Two-monolayer-thick In film with a-rect structure is known to show superconductivity at 3.18 K on thesubstrate. We synthesized the-In-rect film on thesubstrate and found that it also became a superconductor at= 2.38 K. The In film on thesubstrate showed the two-dimensional free-electron-like circular Fermi surface as on thesubstrate. However, the butterfly-wing-like shape contour at the Fermi surface was found to be shifted and enlarged on thesubstrate. Density functional calculations revealed that it was caused by the difference of the substrate.on thesubstrate was considered to be identical to that on thesubstrate in consideration of the recently reported surface defect density dependence of. These results indicated that the interaction with the substrate does not play a crucial role in the superconductivity of the two-monolayer-thick In film.