Bandgap engineering of InSb by N incorporation by metal-organic chemical vapor deposition
Bandgap engineering of InSb by N incorporation by metal-organic chemical vapor deposition
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金属有机化学气相沉积掺氮 InSb 的带隙工程
DOI：
10.1016/j.jallcom.2018.04.287
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发表时间：
2018
影响因子：
6.2
通讯作者：
Dianwen Zhang
中科院分区：
文献类型：
--
作者：
Yunjiang Jin;X. Tang;C. Ke;S. Yu;Dianwen Zhang
带隙工程是InSb在长波红外探测中应用的必要条件。因此，InSbN合金异质外延沉积在GaAs衬底上的金属有机化学气相沉积（MOCVD），期望通过N的掺入大的带隙减少长波长红外光电探测。研究了退火处理对生长的InSbN合金的结构和光学性质的影响。光致发光（PL）测试表明，在10 K时，InSbN合金的PL波长最长可达λ 7.2 μm，与未掺杂的InSb外延层相比，PL波长延长了λ 1.8 μm，表明N的掺入成功地降低了带隙。X射线光电子能谱（XPS）测试表明，三种氮键共存于合金中，其比例随退火条件的不同而变化。这一观察结果可以解释X射线衍射（XRD）和PL谱的峰位移。与我们以前的工作相比，我们发现在GaAs衬底上生长的InSbN合金比在InSb和GaSb衬底上生长的合金具有更多的氮掺入和带隙减小。
Bandgap engineering is necessary for the application of InSb in long wavelength infrared photodetection. InSbN alloys hetero-epitaxially were therefore deposited on GaAs substrate by metal-organic chemical vapor deposition (MOCVD), expecting a large band gap reduction by N incorporation for long wavelength infrared photodetection. The effects of post annealing treatment on the structural and optical properties of the grown InSbN alloy have been well studied. Photoluminescence measurement (PL) indicated that the longest PL wavelength obtained at 10 K is ∼7.2 μm for the InSbN alloys, which manifests an extension of PL wavelength as large as ∼ 1.8 μm in comparison to the undoped InSb epilayers, suggesting a successful band gap reduction by the N incorporation. X-ray photoelectron spectroscopy (XPS) measurements show that three kinds of nitrogen bonds co-exist in the alloys and their percentages vary with annealing conditions. This observation can explain the peak shifts of X-ray diffraction (XRD) and PL spectra. The comparison to our previous works reveals that the InSbN alloys grown on GaAs substrate can achieve more nitrogen incorporation and band gap reduction than the alloys grown on InSb and GaSb substrates.