Entanglement spectrum of a disordered topological Chern insulator.
Entanglement spectrum of a disordered topological Chern insulator.
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DOI：
10.1103/physrevlett.105.115501
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发表时间：
2010-05
影响因子：
8.6
通讯作者：
E. Prodan;T. Hughes;B. Bernevig
中科院分区：
文献类型：
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作者：
E. Prodan;T. Hughes;B. Bernevig
我们研究了无序存在下拓扑陈氏绝缘子的行为，重点研究了从基态构建的纠缠谱（EtS）。对于具有对称性的系统，通过对守恒量子数进行排序，证明了EtS包含关于拓扑通用性类的显式信息。在没有任何对称性的情况下，我们证明了统计方法（如et的水平统计）同样具有洞察力，使我们能够区分绝缘体何时处于拓扑相或平凡相，并绘制出两相之间的边界。利用et的能级统计和能谱，明确地计算了陈氏绝缘子的相图，作为费米能级（EF）和无序强度的函数，并通过一个新的、高效的实空间公式计算了陈氏数(C)。
We investigate the behavior of a topological Chern insulator in the presence of disorder, with a focus on its entanglement spectrum (EtS) constructed from the ground state. For systems with symmetries, the EtS was shown to contain explicit information about the topological universality class revealed by sorting the EtS against the conserved quantum numbers. In the absence of any symmetry, we demonstrate that statistical methods such as the level statistics of the EtS can be equally insightful, allowing us to distinguish when an insulator is in a topological or trivial phase and to map the boundary between the two phases. The phase diagram of a Chern insulator is explicitly computed as function of Fermi level (EF) and disorder strength using the level statistics of the EtS and energy spectrum, together with a computation of the Chern number (C) via a new, efficient real-space formula.