Boosted gate MOS (BGMOS): device/circuit cooperation scheme to achieve leakage-free giga-scale integration
Boosted gate MOS (BGMOS): device/circuit cooperation scheme to achieve leakage-free giga-scale integration
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升压栅MOS（BGMOS）：器件/电路合作方案，实现无漏电千兆级集成
DOI：
10.1109/cicc.2000.852696
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发表时间：
2000
期刊：
影响因子：
--
通讯作者：
T. Sakurai
中科院分区：
文献类型：
--
作者：
T. Inukai;M. Takamiya;Kouichi Nose;H. Kawaguchi;T. Hiramoto;T. Sakurai
本文提出了一种新的器件和电路方案，在保持电路速度的同时，大大抑制了深亚0.1/SPLµ/m时代的待机漏电流。在具有较高V/subTh/和较厚T/subox/的低泄漏开关上施加升压栅极电压，实现了用于电池型应用的极低备用功率，同时充分抑制了电路性能的劣化和面积开销的增加。文中还讨论了与负栅电压方案的结合以及升压方案在SRAM中的应用。
This paper proposes a new device and circuit scheme that drastically suppresses the stand-by leakage current for the deep sub-0.1 /spl mu/m era while maintaining the circuit speed. Applying boosted gate voltage on the low leakage switches with higher V/sub th/ and thicker T/sub ox/, extremely low stand-by power for battery type application is achieved, while degradation of circuit performance and an increase of area overhead are sufficiently suppressed. The combination with a negative gate voltage scheme and the application of the boosted voltage scheme to SRAMs are also discussed.