Quasi‐normally‐off AlGaN/GaN HEMTs fabricated by fluoride‐based plasma treatment

Quasi‐normally‐off AlGaN/GaN HEMTs fabricated by fluoride‐based plasma treatment
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DOI：
10.1002/pssc.200674859
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发表时间：
2007-06
期刊：
Physica Status Solidi (c)
影响因子：
--
通讯作者：
H. Mizuno;S. Kishimoto;K. Maezawa;T. Mizutani
H. Mizuno;S. Kishimoto;K. Maezawa;T. Mizutani
中科院分区：
其他
文献类型：
--
作者：
H. Mizuno;S. Kishimoto;K. Maezawa;T. Mizutani

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采用氟基等离子体处理制备了准正常关闭的AlGaN/GaN hemt。SIMS测量显示氟原子掺入到AlGaN势垒层中。在n-AlGaN的电容DLTS测量中，氟离子等离子体处理后的样品出现了一个新的活化能为1.51 eV的峰。在200℃热稳定性测试中，阈值电压超过80天没有变化。（©2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim）
Quasi-normally-off AlGaN/GaN HEMTs have been fabricated by fluoride-based plasma treatment. SIMS measurement showed an incorporation of fluorine atoms in the AlGaN barrier layer. In the capacitance DLTS measurements of the n-AlGaN, a new peak with an activation energy of 1.51 eV appeared for the sample with fluoride-plasma treatment. The threshold voltage did not change for the thermal stability test at 200 °C for more than 80 days. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)