Vibrational properties of AlN grown on (111)-oriented silicon
Vibrational properties of AlN grown on (111)-oriented silicon
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DOI：
10.1103/physrevb.63.125313
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发表时间：
2001-03-15
影响因子：
3.7
通讯作者：
Zollner, S
中科院分区：
文献类型：
--
作者：
Prokofyeva, T;Seon, M;Zollner, S
研究了Si（111）衬底上生长的AlN的振动光谱。AlN的沉积使用气体源分子束外延。沿着生长c轴和垂直于纤锌矿c方向的解理面的拉曼背散射使我们能够确定E-2（1）、E-2（2）、A（1）（TO）、A（1）（LO）和E-1（TO）声子能量。对于0.8 μ m厚的AlN层，在0.6 GPa的双轴拉伸应力下，这些值分别为249.0、653.6、607.3、884.5和666.5 cm（-1）。通过结合拉曼和X射线衍射研究，发现AlN的拉曼应力因子对于E-2（2）声子为-6.3 +/-1.4 cm（-1）/GPa。这个因素取决于AlN的弹性常数的公布值，如文中所讨论的。零应力E-2（2）能量确定为657.4 +/- 0.2 cm（-1）。傅里叶变换红外反射和吸收技术使我们能够测量E-1（TO）和A（1）（LO）声子能量。膜厚度（从0.06到1.0妈妈）的反射光谱，这是很好地描述了一个模型，使用阻尼洛伦兹振荡器考虑到晶体各向异性和膜厚度的结果在很大的差异。
We study the vibrational spectrum of AlN grown on Si(111). The AlN was deposited using gas-source molecular beam epitaxy. Raman backscattering along the growth c axis and from a cleaved surface perpendicular to the wurtzite c direction allows us to determine the E-2(1), E-2(2), A(1)(TO), A(1)(LO), and E-1(TO) phonon energies. For a 0.8-mum-thick AlN layer under a biaxial tensile stress of 0.6 GPa, these are 249.0, 653.6, 607.3, 884.5, and 666.5 cm(-1), respectively. By combining the Raman and x-ray diffraction studies, the Raman stress factor of AIN is found to be -6.3 +/- 1.4 cm(-1)/GPa for the E-2(2) phonon. This factor depends on published values of the elastic constants of AlN, as discussed in the text. The zero-stress E-2(2) energy is determined to be 657.4 +/- 0.2 cm(-1). Fourier-transform infrared reflectance and absorption techniques allow us to measure the E-1(TO) and A(1)(LO) phonon energies. The film thickness (from 0.06 to 1.0 mum) results in great differences in the reflectance spectra, which are well described by a model using damped Lorentzian oscillators taking into account the crystal anisotropy and the film thickness.