Laser micropen integrated direct writing for fabrication of thick film gap-tuning capacitor
Laser micropen integrated direct writing for fabrication of thick film gap-tuning capacitor
复制标题
激光微笔集成直写用于厚膜间隙调谐电容器的制造
DOI：
10.1016/j.mee.2013.08.019
复制
发表时间：
2014
影响因子：
2.3
通讯作者：
ZENG Xiaoyan
中科院分区：
文献类型：
--
作者：
CAO Yu;ZENG Xiaoyan
静电驱动平行板调谐电容器具有基电极固定、上电极可动的结构，具有无直流功耗、效率高、易于实现等优点。提出了一种激光微笔集成直写的厚膜静电控制间隙调谐电容器的制备方法。采用商用金浆（Au）作为结构电极材料，聚酰亚胺胶体作为牺牲层材料，在熔融石英玻璃基片上成功制备了厚膜间隙调谐电容阵列。电学分析表明，在实际吸合电压为39 V时，厚膜间隙调谐电容的最大调谐范围为30.35%，在1 GHz频率下Q值为50。
With a fixed base-electrode and a movable upper-electrode structure, the electrostatic actuated parallel plate tuning capacitors have the advantages of no DC power consumption, high efficiency and easy to implement. We propose a novel approach of laser micropen integrated direct writing for fabrication of the thick film electrostatic-controlled gap-tuning capacitors. Adopting commercial gold paste (Au) as the material of structural electrodes and polyimide colloid as the material of sacrificial layer, the thick film gap-tuning capacitor arrays are successfully fabricated on the fused silica glass substrate. The electrical analysis shows that the maximum tuning range (MTR) of the thick film gap-tuning capacitor is 30.35% with the practical pull-in voltage of 39 V, and the Q value is 50 under the frequency of 1 GHz.