SiC nanorods prepared from SiO and activated carbon
SiC nanorods prepared from SiO and activated carbon
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DOI：
10.1023/a:1015207416903
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发表时间：
2002-05-15
影响因子：
4.5
通讯作者：
Sato, T
中科院分区：
文献类型：
--
作者：
Gao, YH;Bando, Y;Sato, T
在1380 ℃下，以SiO2和无定形活性炭（AAC）为原料，合成了直径为20-100 nm，长度为10-100 μ m的SiC纳米棒。通过高分辨透射电子显微镜（HRTEM）和能量色散谱（EDS）对SiC纳米棒的微观结构进行了表征。SiC纳米棒在SiC纳米颗粒的链上或从SiC纳米颗粒的小平面生长。它们通常是直的，并且优先沿[111]方向沿着取向。这些纳米棒存在分支现象。对典型的SiC纳米棒针尖进行了HRTEM和EDS分析。在实验分析的基础上，提出了一种形成机制来解释SiC纳米棒的微观结构特征。(C)2002 Kluwer Academic Publishers.
SiC nanorods with 20-100 nm diameter and 10-100 mum length were synthesized by reaction between SiO and amorphous activated carbon (AAC) at 1380degreesC. Microstructural characterization of the SiC nanorods was carried out by high resolution transmission electron microscopy (HRTEM) and energy dispersive spectroscopy (EDS). The SiC nanorods grow on either a chain or from facets of SiC nanoparticles. They are usually straight and preferentially orientated along the [111] direction. Branching phenomenon exists for these nanorods. Typical SiC nanorod tip was analyzed by HRTEM image and EDS analysis. Based on an experimental analysis, a formation mechanism is proposed to explain the microstructural characterization of the SiC nanorods. (C) 2002 Kluwer Academic Publishers.