Small-signal and temperature noise model for MOSFETs
Small-signal and temperature noise model for MOSFETs
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DOI：
10.1109/tmtt.2002.801339
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发表时间：
2002-08-01
影响因子：
4.3
通讯作者：
Berroth, M
中科院分区：
文献类型：
--
作者：
Pascht, A;Grözing, M;Berroth, M
目前的CMOS工艺提供了渡越频率超过30 GHz的n沟道MOSFET，这对于射频集成电路，例如低噪声放大器来说是有吸引力的。提出了一种改进的MOSFET寄生元件提取的去嵌入法。提取确定小信号等效电路的本征元件。由此提出了一种确定栅极电容的新方法。该去嵌入过程基于方程的解析解，并且便于在任何特定频率确定元素。提出了基于小信号等效电路的温度噪声模型，并对通道噪声进行了解析描述。这使得能够对所有四个噪声参数进行完整的噪声建模，并确定主要噪声源。最后，将噪声系数测量结果与仿真结果进行了比较。
The present CMOS technology provides n-channel MOSFETs with a transit frequency beyond 30 GHz, which are attractive for RF integrated circuits, e.g., low-noise amplifiers. This paper presents an improved deembedding procedure for extraction of parasitic elements of MOSFETs. The extraction determines the intrinsic elements of the small-signal equivalent circuit. As a result, a new method to determine the gate capacitance is presented. This deembedding procedure is based on an analytical solution of the equations and facilitates the determination of the elements at any specific frequency. Moreover, a temperature noise model is presented, which is based on the small-signal equivalent circuit with an analytical description of the channel noise. This enables a complete noise modeling of all four noise parameters and the determination of the dominant noise sources. Finally, the noise-figure measurements are compared with the simulation results.