Four wave mixing in 3C SiC ring resonators
Four wave mixing in 3C SiC ring resonators
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DOI：
10.1063/1.5034456
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发表时间：
2017-07
影响因子：
4
通讯作者：
F. Martini;A. Politi
中科院分区：
文献类型：
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作者：
F. Martini;A. Politi
我们演示了频率转换的四波混频在电信波长使用3C SiC集成平台。该过程通过高Q和小模态体积环形谐振器来增强，允许使用mW级CW功率来泵浦非线性光学过程。我们得到了3C SiC的非线性折射率n_{2}=（5.31\pm 0.04）\x 10^{-19} m^{2}/W，并在结构中观察到了归因于拉曼增益的信号。
We demonstrate frequency conversion by four wave mixing at telecommunication wavelengths using an integrated platform in 3C SiC. The process was enhanced by high-Q and small modal volume ring resonators, allowing the use of mW-level CW powers to pump the nonlinear optical process. We retrieved the nonlinear refractive index $n_{2}=(5.31\pm 0.04)\times 10^{-19} m^{2}/W$ of 3C SiC and observed a signal attributed to Raman gain in the structure.