Very strong antiferromagnetic interlayer exchange coupling with iridium spacer layer for perpendicular magnetic tunnel junctions
Very strong antiferromagnetic interlayer exchange coupling with iridium spacer layer for perpendicular magnetic tunnel junctions
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DOI：
10.1063/1.4977565
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发表时间：
2017-02-27
影响因子：
4
通讯作者：
Yuasa, Shinji
中科院分区：
文献类型：
--
作者：
Yakushiji, Kay;Sugihara, Atsushi;Yuasa, Shinji
本文系统地研究了一种用于垂直磁性隧道结（p-MTJ）的含Ir间隔层的垂直合成反铁磁耦合结构中的层间交换耦合（IEC）。与使用Ru间隔物的情况相比，我们发现IEC能量密度（J（ex））对间隔物厚度（t（Ir））的更宽的峰值。在t（Ir）约为5 nm时，最高IEC能量密度为2.6 erg/cm（2）。p-MTJ纳米柱具有高的磁阻比（131%）以及高的自旋转移矩（STT）开关效率（约2）。Ir间隔层可用于制作STT磁阻随机存取存储器的稳定参考层。由AIP出版社出版。
We systematically studied the interlayer exchange coupling (IEC) in a perpendicular synthetic antiferromagnetically coupled structure having an Ir spacer layer for perpendicular magnetic tunnel junctions (p-MTJs). We found a broader peak in IEC energy density (J(ex)) versus spacer thickness (t(Ir)) compared with the case of using a Ru spacer. The highest IEC energy density was 2.6 erg/cm(2) at a t(Ir) of about 5 nm. The p-MTJ nanopillars had a high magnetoresistance ratio (131%) as well as a high spin-transfer torque (STT) switching efficiency (about 2). An Ir spacer can be used to make a stable reference layer for STT magnetoresistive random access memory. Published by AIP Publishing.