Amorphous lead titanate: a new wide-band gap semiconductor with photoluminescence at room temperature

Amorphous lead titanate: a new wide-band gap semiconductor with photoluminescence at room temperature
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DOI：
10.1002/1099-0712(200011/12)10:6
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发表时间：
2000-11
期刊：
Advanced Materials for Optics and Electronics
影响因子：
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通讯作者：
E. Leite;F. Pontes;E. Paris;C. Paskocimas;Eduardo J H Lee;E. Longo;P. Pizani;J. Varela;V. Mastelaro
E. Leite;F. Pontes;E. Paris;C. Paskocimas;Eduardo J H Lee;E. Longo;P. Pizani;J. Varela;V. Mastelaro
中科院分区：
其他
文献类型：
--
作者：
E. Leite;F. Pontes;E. Paris;C. Paskocimas;Eduardo J H Lee;E. Longo;P. Pizani;J. Varela;V. Mastelaro

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This paper describes a new amorphous wide-band gap semiconductor with photoluminescence (PL) at room temperature. The amorphous PbTiO3 was prepared by a sol–gel-like process in powder and thin film form. The optical property and the PL behaviour showed a direct relation to the amorphous structure. The PL peak energy can be controlled by the change of the exciting surge energy. Copyright © 2000 John Wiley & Sons, Ltd.