Conductance control at the LaAlO3/SrTiO3-interface by a multiferroic BiFeO3 ad-layer
Conductance control at the LaAlO3/SrTiO3-interface by a multiferroic BiFeO3 ad-layer
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DOI：
10.1063/1.4886405
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发表时间：
2014-07
影响因子：
4
通讯作者：
C. Mix;S. Finizio;M. Kläui;G. Jakob
中科院分区：
文献类型：
--
作者：
C. Mix;S. Finizio;M. Kläui;G. Jakob
采用脉冲激光沉积法在SrTiO 3（STO）衬底上制备了BiFeO 3（BFO）/LaAlO 3（LAO）多层薄膜样品。在这项工作中，铁电极化的多铁性BFO广告层上的准二维电子气（2DEG）在LAO/STO界面的顶部被用来操纵的准2DEG的导电性。通过对LAO/STO界面的导电区域进行微结构化，实现了用于测量电阻率的四点几何结构。压电力显微镜允许成像和极化的多铁性层的自发铁电极化。电阻的变化表现出线性依赖于扫描的面积和滞后行为相对于在扫描过程中施加的电压。这是多铁性材料的铁电极化引起电阻变化的证据。将反铁磁BFO层耦合到另一个铁磁层可以实现准2DEG在室温下电导的磁场控制。
Multilayered BiFeO3 (BFO)/LaAlO3 (LAO) thin film samples were fabricated on SrTiO3 (STO) substrates by pulsed laser deposition. In this work, the ferroelectric polarization of a multiferroic BFO ad-layer on top of the quasi-two-dimensional electron gas (2DEG) at the LAO/STO interface is used to manipulate the conductivity of the quasi-2DEG. By microstructuring the conductive area of the LAO/STO-interface, a four-point geometry for the measurement of the resistivity was achieved. Piezo force microscopy allows for imaging and poling the spontaneous ferroelectric polarization of the multiferroic layer. The resistance changes showed a linear dependence on the area scanned and a hysteretic behavior with respect to the voltages applied in the scanning process. This is evidence for the ferroelectric polarization of the multiferroic causing the resistance changes. Coupling the antiferromagnetic BFO layer to another ferromagnetic layer could enable a magnetic field control of the conductance of the quasi-2DEG at t...