Room Temperature Electrical Manipulation of Giant Magnetoresistance in Spin Valves Exchange-Biased with BiFeO3
Room Temperature Electrical Manipulation of Giant Magnetoresistance in Spin Valves Exchange-Biased with BiFeO3
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DOI：
10.1021/nl202537y
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发表时间：
2012-03-01
期刊：
影响因子：
10.8
通讯作者：
Barthelemy, Agnes
中科院分区：
文献类型：
--
作者：
Allibe, Julie;Fusil, Stephane;Barthelemy, Agnes
磁电多铁性材料是发展低功率电控自旋电子器件的一种有吸引力的材料。在这里，我们报告的交换偏置的优化，以及巨磁电阻效应（GMR）的自旋阀沉积在顶部的BiFeO3基异质结。我们表明，交换偏置可以通过改变109度畴壁的相对比例进行电控，并提出了可逆过程的解决方案。
Magnetoelectric multiferroics are attractive materials for the development of low-power electrically controlled spintronic devices. Here we report the optimization of the exchange bias as well as the giant magnetoresistance effect (GMR) of spin valves deposited on top of BiFeO3-based heterostnictures. We show that the exchange bias can be electrically controlled through a change in the relative proportion of 109 degrees domain walls and propose solutions toward a reversible process.