In situ sputter deposition of PbTiO_3 thin films on different substrates: Influence of the growth temperature and the sputtered lead flux on the perovskite phase formation
In situ sputter deposition of PbTiO_3 thin films on different substrates: Influence of the growth temperature and the sputtered lead flux on the perovskite phase formation
复制标题
不同基底上PbTiO_3薄膜的原位溅射沉积：生长温度和溅射铅通量对钙钛矿相形成的影响
DOI：
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发表时间：
1997
期刊：
影响因子：
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通讯作者：
B. Thierry
中科院分区：
文献类型：
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作者：
B. Jaber;D. Remiens;B. Thierry
生长机制受生长过程中Pb到达率与再蒸发率之间的竞争所支配。随着入射Pb通量的增加，钙钛矿相的原位形成温度升高。因此，在衬底温度和靶材中铅含量（即溅射铅通量）适当结合的低温条件下制备了PbTiO_3薄膜。由于铅粘着系数对衬底材料非常敏感，钙钛矿相在不同温度下出现，这取决于衬底的性质。在550℃下，在Al_2O_3和SrTiO_3衬底上制备了PbTiO3薄膜；在Si/SiO_2/Ti/Pt基底上，在440℃下获得化学计量膜。研究了不同沉积条件下薄膜的结构和微观结构。衬底温度对薄膜取向影响较大，结晶度与入射铅通量有关。在550℃的温度下，在SrTiO_3衬底上获得了高质量的薄膜（FWHM = 0.2°）。在440°C下沉积在Si/SiO_2/Ti/Pt上的薄膜具有铁电性能。这种化学计量成分的自我控制机制允许在低温下生长铁电薄膜，与实现集成电路的半导体技术兼容。
The growth mechanism is governed by a competition between the arrival rate of Pb and their re-evaporation from the film during the growth. The in situ formation temperature of the perovskite phase increased when the incident Pb flux increased. As a result, PbTiO_3 films have been prepared at low temperature with appropriate combination of the substrate temperature and the lead content in the target, i.e., the sputtered lead flux. Since the lead sticking coefficient is very sensitive to the substrate material, the perovskite phase appears at different temperatures, depending on the substrate nature. PbTiO3 films are obtained at 550 ° C on Al_2O_3 and SrTiO_3 substrates; on Si/SiO_2/Ti/Pt substrates, stoichiometric films are obtained at 440 °C. The structure and the microstructure of the films were examined at various deposition conditions. The substrate temperature strongly influenced the film orientation, and the crystallinity depended on the incident lead flux. High quality thin films (FWHM = 0.2°) are obtained at 550 ° C on SrTiO_3 substrates. The films deposited at 440 ° C on Si/SiO_2/Ti/Pt show ferroelectric properties. This self-controlling mechanism of the stoichiometric composition allows the growth of ferroelectric films at low temperature, compatible with semi-conductor technologies for the realization of integrated circuits.