Epitaxial aluminum nitride tunnel barriers grown by nitridation with a plasma source
Epitaxial aluminum nitride tunnel barriers grown by nitridation with a plasma source
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DOI：
10.1063/1.2819532
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发表时间：
2007-11
影响因子：
4
通讯作者：
T. Zijlstra;C. Lodewijk;N. Vercruyssen;F. Tichelaar;D. Loudkov;T. Klapwijk
中科院分区：
文献类型：
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作者：
T. Zijlstra;C. Lodewijk;N. Vercruyssen;F. Tichelaar;D. Loudkov;T. Klapwijk
高临界电流密度（10？到哪里去？420？kA/cm ~ 2）的超导体-绝缘体-超导体隧道结与氮化铝的障碍已实现使用远程氮等离子体从电感耦合等离子体源在10？3比10？一个？毫巴。我们发现一个更好的再现性和控制相比，以前的工作。从电流-电压特性和横截面透射电子显微镜图像可以推断，相比于常用的AlOx屏障，多晶AlN屏障在transmittance上更加均匀，从而在高临界电流密度下具有更好的质量。
High critical current-density (10?to?420?kA/cm2) superconductor-insulator-superconductor tunnel junctions with aluminum nitride barriers have been realized using a remote nitrogen plasma from an inductively coupled plasma source operated in a pressure range of 10?3–10?1?mbar. We find a much better reproducibility and control compared to previous work. From the current-voltage characteristics and cross-sectional transmission electron microscopy images it is inferred that, compared to the commonly used AlOx barriers, the polycrystalline AlN barriers are much more uniform in transmissivity, leading to a better quality at high critical current densities.