Mobility measurement and degradation mechanisms of MOSFETs made with ultrathin high-k dielectrics
Mobility measurement and degradation mechanisms of MOSFETs made with ultrathin high-k dielectrics
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DOI：
10.1109/ted.2003.821384
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发表时间：
2004-01
影响因子：
3.1
通讯作者：
Wenjuan Zhu;Jin-Ping Han;T. Ma
中科院分区：
文献类型：
--
作者：
Wenjuan Zhu;Jin-Ping Han;T. Ma
Accurate measurements and degradation mechanisms of the channel mobility for MOSFETs with HfO/sub 2/ as the gate dielectric have been systematically studied in this paper. The error in mobility extraction caused by a high density of interface traps for a MOSFET with high-k gate dielectric has been analyzed, and a new method to correct this error has been proposed. Other sources of error in mobility extraction, including channel resistance, gate leakage current, and contact resistance for a MOSFET with ultrathin high-k dielectric have also been investigated and reported in this paper. Based on the accurately measured channel mobility, we have analyzed the degradation mechanisms of channel mobility for a MOSFET with HfO/sub 2/ as the gate dielectric. The mobility degradation due to Coulomb scattering arising from interface trapped charges, and that due to remote soft optical phonon scattering are discussed.
