Direct imaging of electric field behavior in 2,7-diphenyl[1]benzothieno[3,2-b][1]benzothiophene organic field-effect transistors by sum-frequency generation imaging microscopy
Direct imaging of electric field behavior in 2,7-diphenyl[1]benzothieno[3,2-b][1]benzothiophene organic field-effect transistors by sum-frequency generation imaging microscopy
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通过和频生成成像显微镜直接成像 2,7-二苯基[1]苯并噻吩[3,2-b][1]苯并噻吩有机场效应晶体管的电场行为
DOI：
10.1039/d0cp06407f
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发表时间：
2021
影响因子：
3.3
通讯作者：
Baldelli Steven
中科院分区：
文献类型：
--
作者：
Katagiri Chiho;Miyamae Takayuki;Li Hao;Yang Fangyuan;Baldelli Steven
和频成像显微术结合压缩传感（CS-SFG）是一种强大的显微光谱技术，用于探测具有空间分辨率的界面和表面，其中对比度基于化学官能团。我们报道了使用CS-SFG技术来探测由于电荷积累而产生的电场和操作中的内电场的有机场效应晶体管（OFFET），该OFFET具有氧化铝和十八烷基膦酸（ODPA）自组装单层作为栅极介电层和2，7-二苯基[1]苯并噻吩并[3，2-B][1]苯并噻吩（DPh-BTBT）作为半导体层。此外，电场的行为进行了讨论的电场感应SFG强度之间的开路和电压的应用条件的差异。在ODPA/DPh-BTBT或DPh-BTBT/Au的界面处分别观察到ODPA的甲基和DPh-BTBT的苯基的CH伸缩模的SFG峰。此外，来自ODPA/DPh-BTBT的电场感生SFG示出了在OFFERT操作下由于漏极和源极边缘附近的电荷注入和积累而导致的强电场的存在。我们的研究表明，电场感应SFG成像技术是有用的探测在操作条件下的OFFERS的局部电场分布或电荷积累行为。
Sum-frequency generation imaging microscopy combined with compressive-sensing (CS-SFG) is a powerful micro-spectroscopic technique for probing interfaces and surfaces with a spatial resolution where contrast is based on the chemical functional groups. We reported the use of the CS-SFG technique to probe the electric field due to charge accumulation and the internal electric field in operating organic field-effect transistors (OFETs) with the aluminum oxide and octadecylphosphonic acid (ODPA) self-assembled monolayer as the gate dielectric layer and 2,7-diphenyl[1]benzothieno[3,2-b][1]benzothiophene (DPh-BTBT) as the semiconductor layer. In addition, the electric field behavior was discussed by a difference in the electric field induced SFG intensity between the open-circuit and the voltage application conditions. The SFG peak of CH stretching mode derived from methyl groups of ODPA and phenyl groups of DPh-BTBT could be observed at each interface of ODPA/DPh-BTBT or DPh-BTBT/Au, respectively. Moreover, the electric field induced SFG coming from ODPA/DPh-BTBT shows the presence of intense electric field due to charge injection and accumulation near the drain and source electrode edges under the operation of OFETs. Our studies show that the electric field-induced SFG imaging technique is useful for probing the local electric field distribution or charge accumulation behavior in OFETs under operating conditions.