Chemical solution deposition of epitaxial carbide films.
Chemical solution deposition of epitaxial carbide films.
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DOI：
10.1021/ja9102315
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发表时间：
2010-02
影响因子：
15
通讯作者：
Guifu Zou;Haiyan Wang;N. Mara;Hongmei Luo;Nan Li;Z. Di;E. Bauer;Yongqiang Wang;T. McCleskey
中科院分区：
文献类型：
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作者：
Guifu Zou;Haiyan Wang;N. Mara;Hongmei Luo;Nan Li;Z. Di;E. Bauer;Yongqiang Wang;T. McCleskey
碳化物薄膜具有许多独特的性质。开发一种通用的、简单的碳化物薄膜沉积技术将使广泛的技术应用成为可能。在这里，我们报告了一个成本效益的化学溶液沉积或聚合物辅助沉积方法生长外延碳化物（包括TiC，VC和TaC）薄膜。这些外延碳化物膜表现出类似于通过气相沉积方法生长的膜的结构和物理性质。
Carbide films exhibit many unique properties. The development of a versatile and simple technique for the deposition of carbide films will enable a wide range of technological applications. Here we report a cost-effective chemical solution deposition or polymer-assisted deposition method for growing epitaxial carbide (including TiC, VC, and TaC) films. These epitaxial carbide films exhibit structural and physical properties similar to the films grown by vapor deposition methods.