A scanning tunneling microscopy study of the reaction of Si(001)‐(2×1) with NH3
A scanning tunneling microscopy study of the reaction of Si(001)‐(2×1) with NH3
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Si(001)-(2×1)与NH3反应的扫描隧道显微镜研究
DOI：
10.1116/1.575369
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发表时间：
1988
期刊：
影响因子：
--
通讯作者：
F. Bozsó
中科院分区：
文献类型：
--
作者：
R. Hamers;P. Avouris;F. Bozsó
我们用扫描隧道显微镜（STM）在原子水平上研究了半导体表面的化学反应。测量了Si（001）-（2×1）与NH3反应前后的“拓扑"结构和电子态密度。虽然干净和NH3掺杂的表面都表现出（2×1）对称性，但STM图像揭示了占据电子态空间分布的变化，这使我们能够区分反应和未反应的Si（001）二聚体。使用隧道光谱，被占领的和未被占领的清洁和反应的表面的表面状态被识别。结果解释为Si（001）-（2×1）H单氢化物是由NH3的解离吸附产生的。
We have performed a study of a semiconductor surface chemical reaction at the atomic level using a scanning tunneling microscope (STM). The ‘‘topographic’’ structure and electronic density of states are measured before and after reacting Si(001)‐(2×1) with NH3. While both clean and NH3‐dosed surfaces exhibit a (2×1) symmetry, STM images reveal changes in the spatial distribution of occupied electronic states which allow us to distinguish reacted and unreacted Si(001) dimers. Using tunneling spectroscopy, the occupied and unoccupied surface states of the clean and reacted surface are identified. The results are interpreted in terms of a Si(001)‐(2×1)H monohydride resulting from dissociative adsorption of NH3.