Early-stage modification of a silicon oxide surface in fluorocarbon plasma for selective etching over silicon
Early-stage modification of a silicon oxide surface in fluorocarbon plasma for selective etching over silicon
复制标题
氟碳等离子体中氧化硅表面的早期改性，用于硅上的选择性蚀刻
DOI：
10.1063/1.1430882
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发表时间：
2002
影响因子：
3.2
通讯作者：
M. Sekine
中科院分区：
文献类型：
--
作者：
K. Ishikawa;M. Sekine
在Ar稀释的八氟环丁烷（c-C4F8）等离子体中蚀刻二氧化硅薄膜的过程中，利用原位时间分辨衰减全反射红外（IR-ATR）光谱每半秒获得一次红外光谱。利用IR-ATR，可以分别观察碳氟和硅氧的吸收带。这些时间分辨光谱观察使我们能够表征蚀刻过程中非晶氟化碳 (a-C:F) 薄膜的形成。氧化硅上a-C:F刻蚀实验结果表明，氧化硅表面a-C:F膜层厚度达到稳态值，为硅表面稳态值的五分之一。早期表面的改性以a-C:F薄膜的沉积速率和溅射速率之间的平衡为特征。红外分析被证明是表征 a-C:F 薄膜的有力工具......
During the etching of the film of silicon dioxide in an Ar-diluted octafluoro cyclobutane (c-C4F8) plasma, infrared spectra were obtained every half a second by using in situ time-resolved attenuated total reflection infrared (IR-ATR) spectroscopy. With IR-ATR, it was possible to separately observe the bands of absorption by carbon fluorine and silicon oxygen. These time-resolved spectroscopic observations enabled us to characterize the formation of the film of amorphous fluorinated carbon (a-C:F) during the etching process. Experimental results for the etching of a-C:F on the silicon oxide indicated that the thickness of the film of a-C:F on silicon-oxide surface reached steady-state value that was one fifth of the steady-state value on a silicon surface. The modification of the surface in the early stages was characterized in terms of the balance between the rates of deposition and sputtering of the film of a-C:F. Infrared analysis is shown to be a powerful tool for characterizing the film of a-C:F film...