Substrate-limited electron dynamics in graphene
Substrate-limited electron dynamics in graphene
复制标题
DOI：
10.1103/physrevb.77.195415
复制
发表时间：
2008-05-01
影响因子：
3.7
通讯作者：
Guinea, F.
中科院分区：
文献类型：
--
作者：
Fratini, S.;Guinea, F.
我们研究了可极化衬底如SiO2和SiC对石墨烯中载流子动力学的影响。我们发现，由于与石墨烯和衬底界面处的极性模的长程相互作用，准粒子谱获得了有限的增宽。这种机制导致密度依赖的电阻率，其在室温附近表现出急剧增加，其中它可以成为电子传输的主要限制因素。在掺杂的双层石墨烯中，由于更常规的抛物线带色散，该效应较弱。非晶衬底，如聚甲基丙烯酸甲酯，可以诱导相当的幅度的室温电阻率，虽然具有较弱的温度依赖性。
We study the effects of polarizable substrates such as SiO2 and SiC on the carrier dynamics in graphene. We find that the quasiparticle spectrum acquires a finite broadening due to the long-range interaction with the polar modes at the interface between graphene and the substrate. This mechanism results in a density dependent electrical resistivity, which exhibits a sharp increase around room temperature, where it can become the dominant limiting factor of electron transport. The effects are weaker in doped bilayer graphene due to the more conventional parabolic band dispersion. Amorphous substrates, such as polymethyl methacrylate, can induce a room temperature resistivity of comparable magnitude, although with a weaker temperature dependence.