Probing electronic defect states in manganite/SrTiO3 heterostructures by surface photovoltage spectroscopy
Probing electronic defect states in manganite/SrTiO3 heterostructures by surface photovoltage spectroscopy
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DOI：
10.1016/j.mseb.2010.12.014
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发表时间：
2011-03-25
影响因子：
3.6
通讯作者：
Eng, L. M.
中科院分区：
文献类型：
--
作者：
Beyreuther, E.;Thiessen, A.;Eng, L. M.
用表面光电压谱（SPV）研究了在SrTiO 3衬底上生长的镧锰氧化物（La 0. 7 Ca 0. 7 MnO 3，La 0. 7 Ce 0. 3 MnO 3）薄膜异质结中电子缺陷态的能量分布。在不同温度下薄膜/衬底结构和纯衬底的SPV光谱的比较评估中，我们能够详细描述SrTiO 3带隙上的缺陷态图，并且我们发现缺陷态分布主要受衬底影响，即，没有检测到特定的膜引起的缺陷状态。的缺陷状态的可能的起源进行了讨论的框架内的半导体能带计划，考虑到互补的光电导和SPV瞬态数据。(c)2011 Elsevier B. V.保留所有权利。
The energetic distribution of electronic defect states in oxide heterostructures made of ultrathin lanthanum manganite (La0.7Ca0.7MnO3, La0.7Ce0.3MnO3) films on SrTiO3 substrates is investigated by surface photovoltage (SPV) spectroscopy. Within a comparative evaluation of the SPV spectra of both the film/substrate structures and pure substrates at different temperatures we were able to elaborate a map of defect states across the SrTiO3-bandgap and we find that the defect state distribution is mainly affected by the substrate, i.e., no specific film-induced defect states were detected. Possible origins of the defect states are discussed within the framework of a semiconductor band scheme, taking into account complementary photoconductivity and SPV transient data. (c) 2011 Elsevier B.V. All rights reserved.