Effects of He on the recrystallization and Mg diffusion in Mg ion implanted CVD-SiC
Effects of He on the recrystallization and Mg diffusion in Mg ion implanted CVD-SiC
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He对Mg离子注入CVD-SiC再结晶和Mg扩散的影响
DOI：
10.1016/j.jnucmat.2020.152747
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发表时间：
2021-03-01
影响因子：
3.1
通讯作者：
Cao, Jianqing
中科院分区：
文献类型：
--
作者：
Liu, Min;Gong, Hengfeng;Cao, Jianqing
在本研究中，CVD SiC样品注入50 keV的Mg离子和30 keV的He离子和50 keV的Mg离子共注入在室温下，然后在1573 K退火20 h。对退火后的再结晶和Mg扩散行为进行了表征和分析。ToF-SIMS曲线表明，Mg扩散速度更快，在Mg只注入样品比在He和Mg共注入样品。透射电镜结果表明，氦原子向表面高损伤区扩散形成氦泡，有利于非晶层的再结晶。采用基于分子动力学模拟的均方位移（MSD）方法计算了Mg在非晶SiC中的扩散系数，结果表明Mg在非晶SiC中的扩散系数远大于在晶态SiC中的扩散系数。这些结果表明，He气泡及其自身的加速再结晶是抑制Mg在SiC中扩散的原因。(C)2020爱思唯尔B. V.保留所有权利。
In the present study, CVD-SiC samples were implanted with 50 keV Mg ions and co-implanted with 30 keV He ions and 50 keV Mg ions at room temperature, and then annealed at 1573 K for 20 h. The recrystallization and Mg diffusion behavior after annealing were characterized and analyzed. ToF-SIMS profiles indicated that Mg diffused faster in the Mg only implanted sample than in the He and Mg co-implanted sample. TEM results showed that He atoms diffused toward the surface regions with high damage to form He bubbles, which aided the recrystallization of the amorphous layer. Calculations by Mean Square Displacement (MSD) method based on MD simulation prove that the diffusion coefficient of Mg in the amorphous SiC is much higher than that in the crystal SiC. These results indicated that the accelerated recrystallization by He bubbles and themselves were responsible for inhibiting the diffusion of Mg in SiC. (C) 2020 Elsevier B.V. All rights reserved.