Floquet topological insulator in semiconductor quantum wells
Floquet topological insulator in semiconductor quantum wells
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DOI：
10.1038/nphys1926
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发表时间：
2011-06-01
期刊：
影响因子：
19.6
通讯作者：
Galitski, Victor
中科院分区：
文献类型：
--
作者：
Lindner, Netanel H.;Refael, Gil;Galitski, Victor
在过去的几年里，物质的拓扑相已经吸引了我们的想象力，具有诱人的特性，如强大的边缘模式和奇异的非阿贝尔激发，以及从半导体自旋电子学到拓扑量子计算的潜在应用。尽管最近在该领域取得了进展，但我们控制拓扑转变的能力仍然有限，并且通常需要改变材料或结构特性。我们表明，使用Floquet理论，拓扑状态可以诱导在半导体量子阱中，最初在平凡的阶段。这可以通过用微波频率照射来实现，而不改变阱结构、闭合差距和跨越相变。我们表明，准能谱表现出一对螺旋边缘状态。我们讨论了必要的实验参数为我们的建议。这个建议提供了一个例子，并证明了一个新的非平衡拓扑状态，Floquet拓扑绝缘体，本文介绍的原则。
Topological phases of matter have captured our imagination over the past few years, with tantalizing properties such as robust edge modes and exotic non-Abelian excitations, and potential applications ranging from semiconductor spintronics to topological quantum computation. Despite recent advancements in the field, our ability to control topological transitions remains limited, and usually requires changing material or structural properties. We show, using Floquet theory, that a topological state can be induced in a semiconductor quantum well, initially in the trivial phase. This can be achieved by irradiation with microwave frequencies, without changing the well structure, closing the gap and crossing the phase transition. We show that the quasi-energy spectrum exhibits a single pair of helical edge states. We discuss the necessary experimental parameters for our proposal. This proposal provides an example and a proof of principle of a new non-equilibrium topological state, the Floquet topological insulator, introduced in this paper.