Evaluation of Piezoresistive Property of Vanadium Oxide Thin Film Deposited by Sputtering
Evaluation of Piezoresistive Property of Vanadium Oxide Thin Film Deposited by Sputtering
复制标题
DOI：
10.1109/lsens.2018.2791530
复制
发表时间：
2018-01
影响因子：
2.8
通讯作者：
N. Inomata;Nguyen Van Toan;M. Toda;T. Ono
中科院分区：
文献类型：
--
作者：
N. Inomata;Nguyen Van Toan;M. Toda;T. Ono
本文对氧化钒薄膜的压敏性能进行了评价。VOx膜通过反应溅射方法沉积，并在悬浮硅（Si）膜的边缘上图案化为压敏电阻。VOx电阻器、连接到电阻器的电极焊盘以及悬置膜结构使用常规微制造技术制造。VOx电阻器的电阻随着膜的偏转而改变。通过抽真空到每个压差（从0.02到0.05乘0.01 MPa）引起膜的偏转，并使用白光干涉仪测量。电阻随着应变的增加而减小。沉积的VOx的规范因子为259，高于一般的半导体材料如Si。VOx作为MEMS应用的聚焦材料的可行性（例如，应变计）是由我们的实验表明的。
This article shows the evaluation of piezpresistive property of a vanadium oxide (VOx) film. The VOx film is deposited by the reactive sputtering method and patterned as a piezoresistor on an edge of suspended silicon (Si) membrane. The VOx resistor, electrode pads connected to the resistor, and the suspended membrane structure are fabricated using conventional microfabrication techniques. The resistance of the VOx resistor changes as the membrane is deflected. The deflection of the membrane is caused by evacuating to each differential pressure (from 0.02 to 0.05 by 0.01 MPa) and measured using a white-light interferometer. The resistance decreases as the strain is increased. The gauge factor of the deposited VOx is 259, which is higher than general semiconductor materials such as Si. The feasibility of VOx as a focusing material for MEMSNEMS application (e.g., strain gauge) is indicated by our experiment.