Basic principles of STT-MRAM cell operation in memory arrays
Basic principles of STT-MRAM cell operation in memory arrays
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DOI：
10.1088/0022-3727/46/7/074001
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发表时间：
2013-02-20
影响因子：
3.4
通讯作者：
Krounbi, M.
中科院分区：
文献类型：
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作者：
Khvalkovskiy, A. V.;Apalkov, D.;Krounbi, M.
为了可靠运行，STT-MRAM 存储器阵列的各个单元必须满足其性能的特定要求。在这项工作中，我们回顾了其中一些要求，并讨论了 STT-MRAM 操作的基本物理原理，涵盖从设备级到芯片阵列性能的范围及其开发方法。
For reliable operation, individual cells of an STT-MRAM memory array must meet specific requirements on their performance. In this work we review some of these requirements and discuss the fundamental physical principles of STT-MRAM operation, covering the range from device level to chip array performance, and methodology for its development.