Giant Flexoelectric Effect in Ferroelectric Epitaxial Thin Films
Giant Flexoelectric Effect in Ferroelectric Epitaxial Thin Films
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DOI：
10.1103/physrevlett.107.057602
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发表时间：
2011-07-29
影响因子：
8.6
通讯作者：
Noh, T. W.
中科院分区：
文献类型：
--
作者：
Lee, D.;Yoon, A.;Noh, T. W.
我们报告纳米级的应变梯度在铁电HoMnO 3外延薄膜，导致一个巨大的挠曲电效应。使用掠入射面内X射线衍射，我们测量了薄膜中的应变梯度，其比体氧化物报道的典型值大6或7个数量级。透射电子显微镜，电气测量和静电计算的组合表明，flexoelectricity提供了一种手段，调整铁电外延薄膜的物理性质，如域配置和磁滞曲线。
We report on nanoscale strain gradients in ferroelectric HoMnO3 epitaxial thin films, resulting in a giant flexoelectric effect. Using grazing-incidence in-plane x-ray diffraction, we measured strain gradients in the films, which were 6 or 7 orders of magnitude larger than typical values reported for bulk oxides. The combination of transmission electron microscopy, electrical measurements, and electrostatic calculations showed that flexoelectricity provides a means of tuning the physical properties of ferroelectric epitaxial thin films, such as domain configurations and hysteresis curves.