Modification of strain and 2DEG density induced by wafer bending of AlGaN/GaN heterostructure: Influence of edges caused by processing
Modification of strain and 2DEG density induced by wafer bending of AlGaN/GaN heterostructure: Influence of edges caused by processing
复制标题
AlGaN/GaN 异质结构晶圆弯曲引起的应变和 2DEG 密度的变化：加工引起的边缘影响
作者：
Wang Ashu;Zeng Lingyan;Wang Wen;Calle Fern;o
由于压电性，当外部变形时，AlGaN/GaN异质结构中形成的2DEG（NS）的密度可以改变，这可以用于开发压力传感器，并通过基于异质结构的应力工程来增强功率器件的性能。本文采用 3D 机电模拟来研究 AlGaN/GaN 晶圆在弯曲施加单轴应力下的感应应变和 NS 如何受到加工边缘的影响：用于隔离的台面的制造、欧姆接触金属、栅极金属和钝化。结果表明，影响取决于边缘之间的距离、边缘的深度以及所施加的单轴应力的方向。
Due to the piezoelectricity, the density of 2DEG (NS) formed in the AlGaN/GaN heterostructure can be altered when it is deformed externally, which may be exploited to develop pressure sensors and to enhance the performance of power devices by stress engineering based on the heterostructure. In this paper, a 3D electro-mechanical simulation is presented to study how the induced strains and NS for the AlGaN/GaN wafer under bending exerted uniaxial stress are influenced by the edges caused by processing: the fabrication of the mesa used for isolation, the ohmic contact metal, the gate metal, and the passivation. Results show that the influences are dependent on distance between the edges, depth of the edges, and direction of the exerted uniaxial stress.