A Hybrid Pulsed Laser Deposition Approach to Grow Thin Films of Chalcogenides

A Hybrid Pulsed Laser Deposition Approach to Grow Thin Films of Chalcogenides
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生长硫属化物薄膜的混合脉冲激光沉积方法

DOI:
10.1002/adma.202312620
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发表时间:
2024
期刊:
影响因子:
29.4
通讯作者:
Ravichandran, Jayakanth
Ravichandran, Jayakanth
中科院分区:
材料科学1区
文献类型:
--
作者:
Surendran, Mythili;Singh, Shantanu;Chen, Huandong;Wu, Claire;Avishai, Amir;Shao, Yu‐Tsun;Ravichandran, Jayakanth

文献摘要

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蒸汽压力不匹配的材料,如过渡金属硫族化合物,已经成为具有科学和技术重要性的电子、光子和量子材料。然而,蒸汽压不匹配材料的外延生长是具有挑战性的,因为构成材料的不匹配物质,特别是含硫化合物的反应性、粘附系数和表面吸附原子迁移率存在差异。本文报道了一种生长硫属化合物的新方法——混合脉冲激光沉积——其中有机硫前驱体作为硫源与脉冲激光沉积结合使用,以调节沉积膜的化学计量。展示了具有多种结构和化学性质的硫化物(如碱性金属硫族化合物、主族硫族化合物、过渡金属硫族化合物和硫族钙钛矿)的外延或织构薄膜,结构表征表明,与现有技术相比,薄膜的结晶度、表面和界面粗糙度都有所改善。该方法可以推广到其他蒸气压不匹配的硫族化合物,如硒化物和碲化物。这项工作为硫族化合物的广泛外延生长,特别是硫化物基薄膜技术的应用开辟了机会。
Vapor‐pressure mismatched materials such as transition metal chalcogenides have emerged as electronic, photonic, and quantum materials with scientific and technological importance. However, epitaxial growth of vapor‐pressure mismatched materials are challenging due to differences in the reactivity, sticking coefficient, and surface adatom mobility of the mismatched species constituting the material, especially sulfur containing compounds. Here, a novel approach is reported to grow chalcogenides—hybrid pulsed laser deposition—wherein an organosulfur precursor is used as a sulfur source in conjunction with pulsed laser deposition to regulate the stoichiometry of the deposited films. Epitaxial or textured thin films of sulfides with variety of structure and chemistry such as alkaline metal chalcogenides, main group chalcogenides, transition metal chalcogenides, and chalcogenide perovskites are demonstrated, and structural characterization reveal improvement in thin film crystallinity, and surface and interface roughness compared to the state‐of‐the‐art. The growth method can be broadened to other vapor‐pressure mismatched chalcogenides such as selenides and tellurides. This work opens up opportunities for broader epitaxial growth of chalcogenides, especially sulfide‐based thin film technological applications.