Formation of Effective CuI‐GaN Heterojunction with Excellent Ultraviolet Photoresponsive Photovoltage

Formation of Effective CuI‐GaN Heterojunction with Excellent Ultraviolet Photoresponsive Photovoltage
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DOI:
10.1002/pssa.201900200
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发表时间:
2019-07
期刊:
physica status solidi (a)
影响因子:
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通讯作者:
A. Ranade;P. Desai;R. Mahyavanshi;M. Tanemura;G. Kalita
A. Ranade;P. Desai;R. Mahyavanshi;M. Tanemura;G. Kalita
中科院分区:
其他
文献类型:
--
作者:
A. Ranade;P. Desai;R. Mahyavanshi;M. Tanemura;G. Kalita

文献摘要

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在这里,p型γ‐碘化铜(γ‐CuI)和n型氮化镓(GaN)形成了具有优异光电二极管特性的有效异质结。γ‐CuI/GaN异质结具有良好的整流特性,直至施加±20 V的偏置电压和低饱和电流,从而证实了γ‐CuI薄膜的适用性。通过温度相关输运行为分析,阐明了异质结二极管和器件的紫外光响应特性。随着温度的升高,反向饱和电流增强,而二极管理想因数降低。该异质结器件具有显著的光电压0.93 V的紫外光响应光伏作用。在298-373 K的温度范围内,开路电压(Voc)随着温度的升高而降低,温度依赖性光伏作用也被研究。在高达373 K的温度下获得了光电作用,表明该γ‐CuI/GaN光响应器件具有良好的光电压和稳定性。本研究揭示了γ‐CuI/GaN异质结和二极管特性的有效性,可以制造出具有优异光电压和光响应性的异质结光电二极管。
Here, the formation of an effective heterojunction with the p‐type γ‐copper iodide (γ‐CuI) and n‐type gallium nitride (GaN) with excellent photodiode characteristics is demonstrated. The γ‐CuI/GaN heterojunction shows good rectification characteristics up to applied bias voltage of ±20 V with low saturation current, thus confirming the suitability of the γ‐CuI film. The heterojunction diode and ultraviolet (UV) photoresponsive characteristics of the device are elucidated with temperature‐dependent transport behavior analysis. With an increase in temperature, reverse saturation current is enhanced, whereas the diode ideality factor is reduced. The heterojunction device shows UV photoresponsive photovoltaic action with a prominent photovoltage of 0.93 V. The temperature‐dependent photovoltaic action is also investigated in the temperature range of 298–373 K, where the open circuit voltage (Voc) decreases with increase in temperature. The photovoltaic action is obtained at a temperature as high as 373 K, indicating that the γ‐CuI/GaN photoresponsive device is quite stable with excellent photovoltage. This study reveals that the effectiveness of γ‐CuI/GaN heterojunction and diode properties to fabricate a heterojunction photodiode with excellent photovoltage and photoresponsivity.